Reactive Ion Etching
RIE Sentech Plasma System SI 500
The RIE system with Inductively Coupled Plasma features a Planar Triple Spiral Antenna (PTSA), which enhances plasma uniformity and etching precision. It includes a dynamic temperature control system for the substrate, ensuring optimal etching conditions and improved material processing. Additionally, the system is equipped with an endpoint detector that monitors the etching process in real-time, allowing for precise control and improved etching accuracy.
Sample size
Up to 150mm
Gases
Ar, C4F8, CHF3, Cl2, HBr, O2, SF6
Power
RF bias: 600W, ICP: 1200W
Allowed materials
Si, SiO2, SiN and 2D materials (hBN, graphene, TMD)
RIE Oxford Instruments Plasmalab System 100 ICP 180
This Reactive Ion Etching system with Inductively Coupled Plasma (ICP) technology offers precise etching for microfabrication applications. It uses reactive gases and plasma to achieve high etching rates and excellent selectivity, enabling intricate structures with high aspect ratios. The ICP capability ensures uniform plasma distribution, enhancing process control and efficiency.
Sample size
Up to 100mm
Gases
Ar, C4F8, CHF3, Cl2, HBr, O2, SF6
Power
RF bias: 600W, ICP: 2000W
Allowed materials
Metals, AlOx, glass and samples with metal masks
RIE SAMCO 10N
The RIE-10NR is a high-performance, fully automatic Reactive Ion Etching system using fluorine chemistry for selective anisotropic etching. It delivers precise etching with minimal sidewall deterioration and high selectivity between materials, making it ideal for advanced process requirement
Sample size
Up to 200mm
Gases
Ar, CHF3, O2, SF6
Power
RF bias 300W
Allowed materials
Si, SiO2, SiN, 2D materials, metals, AlOx, glass, PbS, InSb, InAs, ITO